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Current Status and Future Development of Quantum Computation

Li Xiaowei, Fu Xiang, Yan Fei, Zhong Youpeng, Lu Chaoyang, Zhang Junhua, He Yu, Yu Shi, Lu Dawei, Xin Tao, Chen Jilei, Lin Benchuan, Zhang Zhensheng, Liu Song, Chen Yuanzhen, Yu Dapeng

Strategic Study of CAE 2022, Volume 24, Issue 4,   Pages 133-144 doi: 10.15302/J-SSCAE-2022.04.016

Abstract: computation, silicon-based quantum computation, as well as other systems.trapped-ion quantum computation, and silicon-based quantum computation); distributed superconductingcomputation" outline_type="title" type="outline">《8 Silicon-based quantum computation》

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The development challenges for silicon-based quantum computation

Silicon-based quantum computation will be booming in the next few

Keywords： quantum computation     quantum algorithm     control system of quantum computation     quantum software     superconductingquantum computation     distributed quantum computation     trapped-ion quantum computation     silicon-basedquantum computation     photonic quantum computation     neutral atom quantum computation     nitrogen-vacancycolor center in diamond     nuclear magnetic resonance quantum computation     quantum computation with spinwave     topological quantum computation    

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Effects of nano-silicon and common silicon on lead uptake and translocation in two rice cultivars

Jianguo LIU,Hui CAI,Congcong MEI,Mingxin WANG

Frontiers of Environmental Science & Engineering 2015, Volume 9, Issue 5,   Pages 905-911 doi: 10.1007/s11783-015-0786-x

Abstract: The current study investigated the effects of nano-silicon (Si) and common Si on lead (Pb) toxicity,

Keywords： silicon (Si)     lead (Pb)     rice (Oryza sativa L.)     toxicity     accumulation    

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HIGH-PERFORMANCE COMPUTATION AND ARTIFICIAL INTELLIGENCE IN PESTICIDE DISCOVERY: STATUS AND OUTLOOK

Frontiers of Agricultural Science and Engineering 2022, Volume 9, Issue 1,   Pages 150-154 doi: 10.15302/J-FASE-2021419

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Spectral element modeling based structure piezoelectric impedance computation and damage identification

Zhigang GUO, Zhi SUN

Frontiers of Structural and Civil Engineering 2011, Volume 5, Issue 4,   Pages 458-464 doi: 10.1007/s11709-011-0133-7

Abstract: This paper presents a numerical simulation study on electromechanical impedance technique for structural damage identification. The basic principle of impedance based damage detection is structural impedance will vary with the occurrence and development of structural damage, which can be measured from electromechanical admittance curves acquired from PZT patches. Therefore, structure damage can be identified from the electromechanical admittance measurements. In this study, a model based method that can identify both location and severity of structural damage through the minimization of the deviations between structural impedance curves and numerically computed response is developed. The numerical model is set up using the spectral element method, which is promised to be of high numerical efficiency and computational accuracy in the high frequency range. An optimization procedure is then formulated to estimate the property change of structural elements from the electric admittance measurement of PZT patches. A case study on a pin-pin bar is conducted to investigate the feasibility of the proposed method. The results show that the presented method can accurately identify bar damage location and severity even when the measurements are polluted by 5% noise.

Keywords： PZT     piezoelectric impedance     optimization     spectral element     damage identification    

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Computer modeling of crystal growth of silicon for solar cells

Lijun LIU, Xin LIU, Zaoyang LI, Koichi KAKIMOTO

Frontiers in Energy 2011, Volume 5, Issue 3,   Pages 305-312 doi: 10.1007/s11708-011-0155-9

Abstract: A computer simulator with a global model of heat transfer during crystal growth of Si for solar cells is developed. The convective, conductive, and radiative heat transfers in the furnace are solved together in a coupled manner using the finite volume method. A three-dimensional (3D) global heat transfer model with 3D features is especially made suitable for any crystal growth, while the requirement for computer resources is kept permissible for engineering applications. A structured/unstructured combined mesh scheme is proposed to improve the efficiency and accuracy of the simulation. A dynamic model for the melt-crystal (mc) interface is developed to predict the phase interface behavior in a crystal growth process. Dynamic models for impurities and precipitates are also incorporated into the simulator. Applications of the computer simulator to Czochralski (CZ) growth processes and directional solidification processes of Si crystals for solar cells are introduced. Some typical results, including the turbulent melt flow in a large-scale crucible of a CZ-Si process, the dynamic behaviors of the mc interface, and the transport and distributions of impurities and precipitates, such as oxygen, carbon, and SiC particles, are presented and discussed. The findings show the importance of computer modeling as an effective tool in the analysis and improvement of crystal growth processes and furnace designs for solar Si material.

Keywords： computer modeling     silicon     crystal growth     solar cells    

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Iteration framework for solving mixed lubrication computation problems

Frontiers of Mechanical Engineering 2021, Volume 16, Issue 3,   Pages 635-648 doi: 10.1007/s11465-021-0632-8

Abstract: The general discrete scheme of time-varying Reynolds equation loses the information of the previous step, which makes it unreasonable. A discretization formula of the Reynolds equation, which is based on the Crank–Nicolson method, is proposed considering the physical message of the previous step. Gauss–Seidel relaxation and distribution relaxation are adopted for the linear operators of pressure during the numerical solution procedure. In addition to the convergent criteria of pressure distribution and load, an estimation framework is developed to investigate the relative error of the most important term in the Reynolds equation. Smooth surface with full contacts and mixed elastohydrodynamic lubrication is tested for validation. The asperity contact and sinusoidal wavy surface are examined by the proposed discrete scheme. Results show the precipitous decline in the boundary of the contact area. The relative error suggests that the pressure distribution is reliable and reflects the accuracy and effectiveness of the developed method.

Keywords： mixed lubrication     discretization formula     relative error     Reynolds equation     asperity    

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Atomistic understanding of interfacial processing mechanism of silicon in water environment: A ReaxFF

Frontiers of Mechanical Engineering 2021, Volume 16, Issue 3,   Pages 570-579 doi: 10.1007/s11465-021-0642-6

Abstract: The interfacial wear between silicon and amorphous silica in water environment is critical in numerousHerein, reactive force field simulations are utilized to study the interfacial process between silicon

Keywords： silicon     ReaxFF     molecular dynamics     friction     damage    

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Effect of extrusion temperature on the physical properties of high-silicon aluminum alloy

YANG Fuliang, GAN Weiping, CHEN Zhaoke

Frontiers of Mechanical Engineering 2007, Volume 2, Issue 1,   Pages 120-124 doi: 10.1007/s11465-007-0021-y

Abstract: Light-weight high-silicon aluminum alloys are used for electronic packaging in the aviation and space-flightExperimental results show that the density of high-silicon aluminum alloys prepared with this method

Keywords： coefficient     hermeticity     temperature     relationship     air-atomization    

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Behavior of Impurities, Defects and Surface Morphology for Silicon and Silicon Based Semiconducting Materials

Tu Hailing

Strategic Study of CAE 2000, Volume 2, Issue 1,   Pages 7-17

Abstract: Since silicon based materials as the alternative material systems have received strong growing interest, the manufacturing technologies and applications of SiGe, silicon-on-insulator (SOI) have been introducedFinally, the author outlooks the future scientific and engineering challenges and opportunities for siliconand silicon based materials envisioned for the sub quarter-micro and nanometer integrated circuits as

Keywords： silicon wafers     epitaxial silicon wafers     SiGe     silicon-on-insulator (SOI)     impurities behavior     defects control    

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Laser enhanced gettering of silicon substrates

Daniel CHEN,Matthew EDWARDS,Stuart WENHAM,Malcolm ABBOTT,Brett HALLAM

Frontiers in Energy 2017, Volume 11, Issue 1,   Pages 23-31 doi: 10.1007/s11708-016-0441-7

Abstract: One challenge to the use of lightly-doped, high efficiency emitters on multicrystalline silicon wafers, a novel laser based method for gettering is investigated for its impact on commercially available silicon

Keywords： gettering     multicystaline     silicon     impurities     laser doping    

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Special issue: Technologies for future high-efficiency industrial silicon wafer solar cells

Frontiers in Energy 2017, Volume 11, Issue 1,   Pages 1-3 doi: 10.1007/s11708-016-0436-4

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Erratum to: Enhancing the photoelectrochemical performance of p-silicon through TiO coating decorated

Frontiers in Energy 2022, Volume 16, Issue 5,   Pages 876-877 doi: 10.1007/s11708-022-0832-x

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Scientific computation of big data in real-world clinical research

Guozheng Li,Xuewen Zuo,Baoyan Liu

Frontiers of Medicine 2014, Volume 8, Issue 3,   Pages 310-315 doi: 10.1007/s11684-014-0358-7

Abstract: This study describes the origin, concept, connotation, and value of studies regarding the scientific computation

Keywords： big data     real world     clinical research     Chinese medicine     medical computing    

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Multiscale computation on feedforward neural network and recurrent neural network

Bin LI, Xiaoying ZHUANG

Frontiers of Structural and Civil Engineering 2020, Volume 14, Issue 6,   Pages 1285-1298 doi: 10.1007/s11709-020-0691-7

Abstract: Computational homogenization methods for nonlinear material and implementation of offline multiscale computation

Keywords： multiscale method     constitutive model     feedforward neural network     recurrent neural network    

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Effects of taping on grinding quality of silicon wafers in backgrinding

Zhigang DONG, Qian ZHANG, Haijun LIU, Renke KANG, Shang GAO

Frontiers of Mechanical Engineering 2021, Volume 16, Issue 3,   Pages 559-569 doi: 10.1007/s11465-020-0624-0

Abstract: Taping is often used to protect patterned wafers and reduce fragmentation during backgrinding of siliconGrinding experiments using coarse and fine resin-bond diamond grinding wheels were performed on siliconHowever, the PV value, surface roughness, and subsurface damage of silicon wafers with taping deterioratedThe PV value of silicon wafers with taping decreased with increasing mesh size of the grinding wheelThe surface roughness and subsurface damage of silicon wafers with taping decreased with increasing mesh

Keywords： taping     silicon wafer     backgrinding     subsurface damage     surface roughness    

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Title Author Date Type Operation

Current Status and Future Development of Quantum Computation

Li Xiaowei, Fu Xiang, Yan Fei, Zhong Youpeng, Lu Chaoyang, Zhang Junhua, He Yu, Yu Shi, Lu Dawei, Xin Tao, Chen Jilei, Lin Benchuan, Zhang Zhensheng, Liu Song, Chen Yuanzhen, Yu Dapeng

Journal Article

Effects of nano-silicon and common silicon on lead uptake and translocation in two rice cultivars

Jianguo LIU,Hui CAI,Congcong MEI,Mingxin WANG

Journal Article

HIGH-PERFORMANCE COMPUTATION AND ARTIFICIAL INTELLIGENCE IN PESTICIDE DISCOVERY: STATUS AND OUTLOOK

Journal Article

Spectral element modeling based structure piezoelectric impedance computation and damage identification

Zhigang GUO, Zhi SUN

Journal Article

Computer modeling of crystal growth of silicon for solar cells

Lijun LIU, Xin LIU, Zaoyang LI, Koichi KAKIMOTO

Journal Article

Iteration framework for solving mixed lubrication computation problems

Journal Article

Atomistic understanding of interfacial processing mechanism of silicon in water environment: A ReaxFF

Journal Article

Effect of extrusion temperature on the physical properties of high-silicon aluminum alloy

YANG Fuliang, GAN Weiping, CHEN Zhaoke

Journal Article

Behavior of Impurities, Defects and Surface Morphology for Silicon and Silicon Based Semiconducting Materials

Tu Hailing

Journal Article

Laser enhanced gettering of silicon substrates

Daniel CHEN,Matthew EDWARDS,Stuart WENHAM,Malcolm ABBOTT,Brett HALLAM

Journal Article

Special issue: Technologies for future high-efficiency industrial silicon wafer solar cells

Journal Article

Erratum to: Enhancing the photoelectrochemical performance of p-silicon through TiO coating decorated

Journal Article

Scientific computation of big data in real-world clinical research

Guozheng Li,Xuewen Zuo,Baoyan Liu

Journal Article

Multiscale computation on feedforward neural network and recurrent neural network

Bin LI, Xiaoying ZHUANG

Journal Article

Effects of taping on grinding quality of silicon wafers in backgrinding

Zhigang DONG, Qian ZHANG, Haijun LIU, Renke KANG, Shang GAO

Journal Article